1 - 2

© 2000 IXYS All rights reserved

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

800

V

V

DGR

T

J

= 25

°C to 150°C; R

800

V

V

GS

Continuous

±20

V

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C34

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

136

A

I

AR

T

C

= 25

°C36

A

E

AR

T

C

= 25

°C64

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

£ I

5

V/ns

T

J

£ 150°C, R

P

D

T

C

= 25

°C

560

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M

d

Mounting torque

TO-264

0.9/6 Nm/lb.in.

Weight

PLUS 247

6

g

TO-264

10

g

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

V

DSS

V

800

V

V

GS(th)

V

3.0

5.0 V

I

GSS

V

±200 nA

I

DSS

V

DS

= V

DSS

T

25

°C

100

mA

V

T

R

DS(on)

V

GS

= 10 V, I

0.24

W

Note 1

Features

• Internationalstandardpackages

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

power supplies

• DC choppers

• AC motor control

• Temperatureandlightingcontrols

Advantages

mounting

• Space savings

• High power density

Power MOSFETs

Single MOSFET Die

Avalanche Rated

98560B (6/99)

G

D

(TAB)

G = Gate

D = Drain

S = Source

TAB = Drain

IXFK 34N80

V

DSS

=

800 V

IXFX 34N80

I

D25

=34 A

R

0.24

W

t

S

G

D

(TAB)

TO-264 AA (IXFK)

Preliminary data sheet

IXYS reserves the right to change limits, test conditions, and dimensions.