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LMX1501AM Scheda tecnica(PDF) 9 Page - National Semiconductor (TI) |
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LMX1501AM Scheda tecnica(HTML) 9 Page - National Semiconductor (TI) |
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9 / 22 page ![]() Charge Pump Current Specification Definitions TLW12340 – 17 I1 e CP sink current at VDo e VP b DV I2 e CP sink current at VDo e VP 2 I3 e CP sink current at VDo e DV I4 e CP source current at VDo e VP b DV I5 e CP source current at VDo e VP 2 I6 e CP source current at VDo e DV D V e Voltage offset from positive and negative rails Dependent on VCO tuning range relative to VCC and ground Typical values are between 05V and 10V 1 IDo vs VDo e Charge Pump Output Current magnitude variation vs Voltage e lI1l b lI3l lI1l a lI3l 100% and lI4l b lI6l lI4l a lI6l 100% 2 IDo-sink vs IDo-source e Charge Pump Output Current Sink vs Source Mismatch e lI2l b lI5l lI2l a lI5l 100% 3 IDo vs TA e Charge Pump Output Current magnitude variation vs Temperature e lI2 temp l b lI2 25 C l lI2 25 C l 100% and lI5 temp l b lI5 25 C l lI5 25 C l 100% 4 Kw e Phase detectorcharge pump gain constant e lI2lalI5l RF Sensitivity Test Block Diagram TLW12340 – 18 Note 1 N e 10000 R e 50 P e 64 Note 2 Sensitivity limit is reached when the error of the divided RF output fOUT is greater than or equal to 1 Hz 9 |
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