APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739

2

ABSOLUTE MAXIMUM RATINGS

SPECIFICATIONS

PA89 • PA89A

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

SUPPLY VOLTAGE, +V

1200V

OUTPUT CURRENT, within SOA

100mA

POWER DISSIPATION, internal at T

40W

INPUT VOLTAGE, differential

±25V

INPUT VOLTAGE, common mode

±V

S

25V

TEMPERATURE, pin solder - 10s max

300°C

150°C

TEMPERATURE, storage

–65 to 125°C

OPERATING TEMPERATURE RANGE, case

–55 to 125°C

PA89

PA89A

PARAMETER

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

INPUT

OFFSET VOLTAGE, initial

.5

2

.25

.5

mV

OFFSET VOLTAGE, vs. temperature

Full temperature range

10

30

5

10

µV/°C

OFFSET VOLTAGE, vs. supply

7

*

µV/V

OFFSET VOLTAGE, vs. time

75

*

µV/kh

5

50

3

10

pA

BIAS CURRENT,vs. supply

.01

*

pA/V

5

50

3

20

pA

INPUT IMPEDANCE, DC

*

MΩ

INPUT CAPACITANCE

4

*

pF

Full temperature range

±V

S

50

*

V

COMMON MODE REJECTION, DC

Full temperature range, V

96

110

*

*

dB

INPUT NOISE

10kHz BW, R

4

µV RMS

GAIN

OPEN LOOP GAIN at 10Hz

R

108

120

*

*

dB

GAIN BANDWIDTH PRODUCT

R

10

*

MHz

POWER BANDWIDTH

R

5

*

kHz

PHASE MARGIN

Full temperature range, A

60

*

°

OUTPUT

I

±V

±V

*

*

V

Full temperature range, I

±V

S

20 ±V

*

*

V

CURRENT, continuous

Full temperature range

75

*

mA

SLEW RATE

C

12

16

*

*

V/µs

CAPACITIVE LOAD, Av = 10

Full temperature range

1

*

nF

CAPACITIVE LOAD, Av>10

Full temperature range

SOA

*

SETTLING TIME to .1%

R

2

*

µs

POWER SUPPLY

VOLTAGE, V

S

4

Full temperature range

±75

±500

±600

*

*

*

V

CURRENT, quiescent

4.8

6.0

*

*

mA

THERMAL

Full temperature range, F > 60Hz

2.1

2.3

*

*

°C/W

RESISTANCE, DC, junction to case

Full temperature range, F < 60Hz

3.3

3.5

*

*

°C/W

RESISTANCE, junction to air

Full temperature range

15

*

°C/W

TEMPERATURE RANGE, case

Meets full range specifications

–25

+85

*

*

°C

The PA89 is constructed from MOSFET transistors. ESD handling procedures must be observed.

The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or

subject to temperatures in excess of 850°C to avoid generating toxic fumes.

CAUTION

NOTES: *

The specification of PA89A is identical to the specification for PA89 in applicable column to the left.

1. Unless otherwise noted: T

age are ± values given.

2. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to

achieve high MTTF.

3. Doubles for every 10°C of temperature increase.

4. +V

5. Rating applies only if the output current alternates between both output transistors at a rate faster than 60Hz.