NVMFS4C01N datasheet(1/6 Pages) ONSEMI

Il numero della parte	NVMFS4C01N

Spiegazioni elettronici	Power MOSFET

PDF	6 Pages

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Produttore elettronici	ONSEMI [ON Semiconductor]

Homepage	http://www.onsemi.com

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1 / 6 page

April, 2016 − Rev. 2

1

Publication Order Number:

NVMFS4C01N/D

NVMFS4C01N

Power MOSFET

30 V, 0.67 m

W, 370 A, Single N−Channel,

Logic Level, SO−8FL

Features

• Small Footprint (5x6 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• NVMFS4C01NWF − Wettable Flanks Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

"20

V

Continuous Drain Cur-

rent RqJC (Notes 1, 3)

Steady

State

TC = 25°C

ID

370

A

Power Dissipation

RqJC (Notes 1, 3)

TC = 25°C

PD

161

W

Continuous Drain Cur-

rent RqJA (Notes 1, 2,

3)

Steady

State

TA = 25°C

ID

57

A

Power Dissipation

RqJA (Notes 1, 2, 3)

TA = 25°C

PD

3.84

W

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

900

A

Operating Junction and Storage Temperature

TJ, Tstg

− 55 to

175

°C

Source Current (Body Diode)

IS

110

A

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 35 A)

EAS

862

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

0.93

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

39

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

www.onsemi.com

4C01xx

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

0.67 m

W @ 10 V

370 A

0.95 m

W @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5)

S

G

D

Device

Package

Shipping†

ORDERING INFORMATION

NVMFS4C01NT1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NVMFS4C01NT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NVMFS4C01NWFT1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NVMFS4C01NWFT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

4C01N = Specific Device Code for

NVMFS4C01N

4C01WF= Specific Device Code of

NVMFS4C01NWF

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceabililty

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