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KTA1663 Scheda tecnica(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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KTA1663 Scheda tecnica(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page ![]() Production specification PNP Silicon Epitaxial Planar Transistor KTA1663 E092 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-2V,IC=-500mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=-1.5A, IB= -0.03A -2.0 V Base-emitter voltage VBE VCE=-2V ,IC=-500mA -1.0 V Transition frequency fT VCE=-2V, IC= -500mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 50 pF CLASSIFICATION OF hFE(1) Rank O Y Range 100-200 160-320 MARKING HO HY |
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