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STM32F303VB Scheda tecnica(PDF) 81 Page - STMicroelectronics |
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STM32F303VB Scheda tecnica(HTML) 81 Page - STMicroelectronics |
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81 / 148 page ![]() DocID023353 Rev 13 81/148 STM32F303xB STM32F303xC Electrical characteristics 124 6.3.9 PLL characteristics The parameters given in Table 46 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 24. 6.3.10 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 46. PLL characteristics Symbol Parameter Value Unit Min Typ Max fPLL_IN PLL input clock(1) 1. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT. 1(2) -24(2) MHz PLL input clock duty cycle 40(2) -60(2) % fPLL_OUT PLL multiplier output clock 16(2) -72 MHz tLOCK PLL lock time - - 200(2) µs Jitter Cycle-to-cycle jitter - - 300(2) 2. Guaranteed by design. ps Table 47. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design. Unit tprog 16-bit programming time TA = –40 to +105 °C 40 53.5 60 µs tERASE Page (2 KB) erase time TA = –40 to +105 °C 20 - 40 ms tME Mass erase time TA = –40 to +105 °C 20 - 40 ms IDD Supply current Write mode - - 10 mA Erase mode - - 12 mA Table 48. Flash memory endurance and data retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results. NEND Endurance TA = –40 to +85 °C (6 suffix versions) TA = –40 to +105 °C (7 suffix versions) 10 kcycles tRET Data retention 1 kcycle(2) at TA = 85 °C 2. Cycling performed over the whole temperature range. 30 Years 1 kcycle(2) at TA = 105 °C 10 10 kcycles(2) at TA = 55 °C 20 |
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