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STTH8S12 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STTH8S12 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH8S12 4/8 DocID026655 Rev 1 Figure 7. Reverse recovery charges versus dIF/dt (typical values) Figure 8. Reverse recovery softness factor versus dIF/dt (typical values) 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 350 400 450 500 QRR(nC) I F = I F(AV) V R = 600 V T j = 125 °C dIF/dt(A/µs) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 300 350 400 450 500 SFACTOR I F=IF(AV) V R=600 V T j=125 °C dIF/dt(A/µs) Figure 9. Relative variations of dynamic parameters versus junction temperature Figure 10. Junction capacitance versus reverse voltage applied (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 I F = I F(AV) V R = 600 V Reference: T j = 125 °C I RM S FACTOR Q RR Tj(°C) C(pF) 1 10 100 1 10 100 1000 10000 F = 1 MHz V OSC = 30 mVRMS T j = 25 °C V R (V) |
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