STTH30L06-Y datasheet(2/8 Pages) STMICROELECTRONICS

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Characteristics

STTH30L06-Y

2/8

Doc ID 018925 Rev 1

Characteristics

To evaluate the conduction losses use the following equation:

P = 0.95 x IF(AV) + 0.010 IF

(RMS)

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) Forward rms voltage

IF(AV)

Average forward current

Tc = 125 °C  = 0.530A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

300

Tstg

Storage temperature range

-65 to +175

°C

Operating junction temperature range

-40 to +175

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value (max)

Unit

Rth(j-c)

Junction to case

1.1

°C/W

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

800

(2)

Forward voltage drop

Tj = 25 °C

IF = 30 A

1.55

Tj = 150 °C

1.0

1.25

Pulse test: tp = 5 ms,  < 2%

Pulse test: tp = 380 µs,  < 2%

Table 5.

Dynamic Characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A,

IR =1 A

IF = 1 A, dIF/dt = 50 A/µs,

VR =30 V

IRM

Reverse recovery

current

Tj = 125 °C

IF = 30 A, VR = 400 V,

dIF/dt = 100 A/µs

11.5

tfr

Forward recovery

time

Tj = 25 °C

IF = 30 A, dIF/dt = 100 A/µs,

VFR = 1.1 x VFmax

500

VFP

Forward recovery

voltage

Tj = 25 °C

IF = 30 A, dIF/dt = 100 A/µs,

VFR = 1.1 x VFmax

2.5

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