STB13N60M2 datasheet(1/23 Pages) STMICROELECTRONICS

Il numero della parte	STB13N60M2

Spiegazioni elettronici	Extremely low gate charge

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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September 2016

DocID024569 Rev 4

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This is information on a product in full production.

www.st.com

STB13N60M2,

STD13N60M2

N-

channel 600 V, 0.35 Ω typ., 11 A

MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

VDS@TJMAX.

RDS(on) max.

ID

STB13N60M2

650 V

0.38 Ω

11 A

STD13N60M2



Extremely low gate charge



Excellent output capacitance (COSS) profile



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Table 1: Device summary

Order code

Marking

Package

Packing

STB13N60M2

13N60M2

D2PAK

Tape and reel

STD13N60M2

DPAK

D(2, TAB)

G(1)

S(3)

AM01476v1_tab

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