DocID025173 Rev 1

5/18

STBLED627, STDLED627

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 17)

-22

-

ns

Rise time

-

12

-

ns

Turn-off-delay time

-

49

-

ns

Fall time

-

20

-

ns

Table 7. Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

-

5.5

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

27

A

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

-

1.5

V

Reverse recovery time

-290

ns

Reverse recovery charge

-

1900

nC

Reverse recovery current

-

13.5

A

Reverse recovery time

(see Figure 22)

-335

ns

Reverse recovery charge

-

2400

nC

Reverse recovery current

-

14.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Gate-source breakdown

Igs = ± 1 mA

30

-

V