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STP2N95K5 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STP2N95K5
Spiegazioni elettronici  N-channel 950 V, 4.2 Ω typ., 2 A Zener-protected SuperMESH™5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
PDF  23 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP2N95K5 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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DocID025300 Rev 1
3/23
STD2N95K5, STF2N95K5, STP2N95K5, STU2N95K5
Electrical ratings
23
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220FP
DPAK, TO-220,
IPAK
V
GS
Gate- source voltage
30
V
I
D
Drain current (continuous) at T
C
= 25 °C
2
(1)
1.
Limited by maximum junction temperature
2A
I
D
Drain current (continuous) at T
C
= 100 °C
1.3
(1)
1.3
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
8
A
P
TOT
Total dissipation at T
C
= 25 °C
20
45
W
I
AR
Max current during repetitive or single
pulse avalanche
1A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V)
50
mJ
dv/dt
(3)
3.
I
SD
≤ 2 A, di/dt ≤ 100 A/μs, V
Peak ≤
V
(BR)DSS.
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(4)
4.
V
SD ≤
760 V
MOSFET dv/dt ruggedness
50
V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; T
C
=25 °C)
2500
V
T
j
T
stg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220FP
DPAK,
TO-220,
IPAK
R
thj-case
Thermal resistance junction-case max
6.25
2.78
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.50
°C/W



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