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STF3N80K5 Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STF3N80K5
Spiegazioni elettronici  N-channel 800 V, 2.8 Ω typ., 2.5 A Zener-protected SuperMESH™5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
PDF  23 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF3N80K5 Scheda tecnica(HTML) 3 Page - STMicroelectronics

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DocID025000 Rev 3
3/23
STD3N80K5, STF3N80K5, STP3N80K5, STU3N80K5
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
TO-220
IPAK
V
GS
Gate- source voltage
30
V
I
D
Drain current (continuous) at
T
C
= 25 °C
2.5
(1)
1.
For TO-220FP limited by maximum junction temperature.
A
I
D
Drain current (continuous) at
T
C
= 100 °C
1.6
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
10
A
P
TOT
Total dissipation at T
C
= 25 °C
60
20
60
60
W
I
AR
Max current during repetitive or
single pulse avalanche (pulse width
limited by T
jmax
)
1A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50
V)
65
mJ
dv/dt
(3)
3.
I
SD
≤ 2.5 A, di/dt ≤ 100 A/μs, peak V
DS
≤ V
(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
dv/dt
(4)
4.
V
DS ≤
640 V
MOSFET dv/dt ruggedness
50
V/ns
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220FP
TO-220
IPAK
R
thj-case
Thermal resistance junction-case
2.08
6.25
2.08
°C/W
R
thj-pcb
Thermal resistance junction-pcb
50
(1)
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu
R
thj-amb
Thermal resistance junction-amb
62.5
62.5
100



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