STF15N95K5 datasheet(3/18 Pages) STMICROELECTRONICS

3 / 18 page

DocID025280 Rev 2

3/18

STF15N95K5, STP15N95K5, STW15N95K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

Gate- source voltage

± 30

Drain current (continuous) at T

= 25 °C

(1)

Limited by maximum junction temperature.

Drain current (continuous) at T

= 100 °C

7.6

(1)

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

(1)

TOT

Total dissipation at T

= 25 °C

170

Max current during repetitive or single

pulse avalanche

(pulse width limited by T

jmax

)

Single pulse avalanche energy

(starting T

= 25 °C, I

, V

= 50 V)

124

ESD

Gate-source human body model

(R= 1,5 k

Ω, C = 100 pF)

2kV

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;T

=25 °C)

2500

dv/dt

(3)

≤ 12, di/dt ≤ 100 A/μs, V

DS(peak) ≤

(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt

(4)

≤ 760 V

MOSFET dv/dt ruggedness

V/ns

stg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

thj-case

Thermal resistance junction-case max

0.74

4.2

°C/W

thj-amb

Thermal resistance junction-amb max

62.5

°C/W

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