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4356-RX-434 Scheda tecnica(PDF) 4 Page - Silicon Laboratories |
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4356-RX-434 Scheda tecnica(HTML) 4 Page - Silicon Laboratories |
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4 / 26 page ![]() Si4356 4 Rev 1.2 1. Electrical Specifications Table 1. Recommended Operating Conditions Parameter Symbol Test Condition Min Typ Max Unit Ambient Temperature TA — –40 25 85 C Supply Voltage VDD —1.8 — 3.6 V I/O Drive Voltage VGPIO —1.8 — 3.6 V Table 2. DC Characteristics* Parameter Symbol Test Condition Min Typ Max Unit Standby Mode Current IStandby Configuration retained, all other functions OFF — 50 — nA RX Mode Current IRX —— 12 — mA *Note: All specifications guaranteed by production test unless otherwise noted. Production test conditions and max limits are listed in the "Production Test Conditions" section of "1.1. Definition of Test Conditions" on page 8. Table 3. Receiver Electrical Characteristics1 Parameter Symbol Test Condition Min Typ Max Unit Frequency Range FRANGE Only frequencies listed in Table 9 supported 315 — 917 MHz Sensitivity2 PFSK BER < 0.1%, 2.4 kbps, (G)FSK, Configuration = FSK1 (See Section 3.) —–113— dBm PFSK BER < 0.1%, 2.4 kbps, (G)FSK, Configuration = FSK6 (See Section 3.) –104 dBm POOK BER < 0.1%, 2.4 kbps, OOK, Configuration = OOK6 (See Section 3.) —–111— dBm RX Channel Bandwidth3 BW — 100 — 535 kHz BER Variation vs Power Level3 PRX_RES Up to +5 dBm Input Level — 0 0.1 ppm Notes: 1. Test conditions and max limits are listed in section “1.1. Definition of Test Conditions”. 2. Sensitivity measured at 434 MHz using a PN9 modulated input signal. Received signal is filtered, deglitched, and retimed using an external RC filter (R = 1 k , C = 47 nF) and MCU. 3. Guaranteed by qualification. Qualification test conditions are listed in section “1.1. Definition of Test Conditions”. |
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