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EM351-RTR Scheda tecnica(PDF) 9 Page - Silicon Laboratories

Il numero della parte EM351-RTR
Spiegazioni elettronici  High-Performance, Integrated ZigBee/802.15.4 System-on-Chip
PDF  241 Pages
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Produttore elettronici  SILABS [Silicon Laboratories]
Homepage  http://www.silabs.com
Logo SILABS - Silicon Laboratories

EM351-RTR Scheda tecnica(HTML) 9 Page - Silicon Laboratories

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9
Rev 1.3
2.3. Environmental Characteristics
Table 2.3 lists the rated environmental characteristics of the EM35x.
2.4. DC Electrical Characteristics
Table 2.4 lists the dc electrical characteristics of the EM35x.
Table 2.3. Environmental Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
ESD (human body model)
On any pin
±2
kV
ESD (charged device model)
Non-RF pins
±400
V
ESD (charged device model)
RF pins
±225
V
Package Thermal Resistance*
JA
27.1
°C/W
*Note:
Thermal resistance assumes multi-layer PCB with exposed pad soldered to a PCB board.
Table 2.4. DC Characteristics
Measured on Silicon Labs’ EM357 reference design with TA = 25 °C and VDD = 3 V, unless otherwise noted.
Parameter
Test Condition
Min
Typ
Max
Unit
Regulator input voltage
(VDD_PADS)
2.1
3.6
V
Power supply range (VDD_MEM)
Regulator output or external input
1.7
1.8
1.9
V
Power supply range (VDD_CORE)
Regulator output
1.18
1.25
1.32
V
Deep Sleep Current
Quiescent current, internal RC
oscillator disabled
–40 °C, VDD_PADS=3.6 V
0.4
A
+25 °C, VDD_PADS=3.6 V
0.4
A
+85 °C, VDD_PADS=3.6 V
0.7
A
Quiescent current, including
internal RC oscillator
–40 °C, VDD_PADS=3.6 V
0.7
A
+25 °C, VDD_PADS=3.6 V
0.7
A
+85°C, VDD_PADS=3.6 V
1.1
A
Quiescent current, including
32.768 kHz oscillator
–40 °C, VDD_PADS=3.6 V
0.8
A
+25 °C, VDD_PADS=3.6 V
1.0
A
+85 °C, VDD_PADS=3.6 V
1.5
A
Quiescent current, including
internal RC oscillator and
32.768 kHz oscillator
–40 °C, VDD_PADS=3.6 V
1.1
A
+25 °C, VDD_PADS=3.6 V
1.3
A
+85 °C, VDD_PADS=3.6 V
1.8
A
Simulated deep sleep (debug
mode) current
With no debugger activity
300
A



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