IPN2M50T-H datasheet(7/25 Pages) STMICROELECTRONICS

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STIPN2M50T-H

Electrical characteristics

DocID028651 Rev 5

7/25

Electrical characteristics

TJ = 25 °C unless otherwise specified.

3.1

Inverter part

Table 7: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero-gate voltage drain

current

VDS = 500 V, VCC = 15 V,

VBoot = 15 V

V(BR)DSS

Drain-source breakdown

voltage

VCC= Vboot = 15 V, VIN(1) = 0 V,

ID = 1 mA

500

RDS(on)

Static drain-source turn-on

resistance

VCC = Vboot = 15 V,

VIN(1)= 0 - 5 V, ID = 1.2 A

1.5

1.7

VSD

Drain-source diode forward

voltage

VIN(1)

= 0 “logic state”, ID = 2 A

0.9

1.6

Notes:

(1)Applied among HINx, LINx and GND for x = U, V, W.

Table 8: Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton(1)

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN(2) = 0 - 5 V,

IC = 1.2 A

(see Figure 4: "Switching

time definition")

267

tc(on)(1)

Crossover time (on)

153

toff(1)

Turn-off time

265

tc(off)(1)

Crossover time (off)

trr

Reverse recovery time

192

Eon

Turn-on switching energy

µJ

Eoff

Turn-off switching energy

Notes:

(1)tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of

MOSFET itself under the internally given gate driving conditions.

(2)Applied among HINx, LINx and GND for x = U, V, W.

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