Preliminary data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

February 2010

Doc ID 17186 Rev 1

1/8

8

ST13003DN

High voltage fast-switching NPN power transistor

Features

Application

Description

The device is manufactured using high voltage

multi epitaxial planar technology for high switching

speeds and high voltage capability. It uses a

cellular emitter structure with planar edge

termination to enhance switching speeds while

maintaining the wide RBSOA.

Figure 1.

Internal schematic diagram

SOT-32

2

3

1

Table 1.

Device summary

Order code

Marking

Package

Packaging

ST13003DN

13003DN

SOT-32BAG

www.st.com

Obsolete

Product(s)

- Obsolete

Product(s)