GF100N30 datasheet(1/13 Pages) STMICROELECTRONICS

Il numero della parte	GF100N30

Spiegazioni elettronici	90 A - 330 V - fast IGBT

PDF	13 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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1 / 13 page

February 2009

Rev 1

1/13

13

STGF100N30

STGP100N30, STGW100N30

90 A - 330 V - fast IGBT

Features

■ Optimized for sustain and energy recovery

circuits in PDP applications.

■ State-of-the-art STripFET™ technology

■ Peak collector current IRP = 330 A @

TC = 25 °C (see Table 2)

■ Very low-on voltage drop (VCE(sat)) and energy

per pulse for improved panel efficiency

■ High repetitive peak current capability

Description

Advanced high-density and high-current IGBT

technology with low-drop companion diode

adapted to various functions in PDP sets.

Figure 1.

Internal schematic diagram

TO-247

1

2

3

1

2

3

1

2

3

TO-220FP

TO-220

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STGF100N30

GF100N30

TO-220FP

Tube

STGP100N30

GP100N30

TO-220

Tube

STGW100N30

GW100N30

TO-247

Tube

www.st.com

Obsolete

Product(s)

- Obsolete

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