STGW60V60F datasheet(7/14 Pages) STMICROELECTRONICS

Il numero della parte	STGW60V60F

Spiegazioni elettronici	Low thermal resistance

PDF	14 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

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7 / 14 page

DocID024701 Rev 2

7/14

STGW60V60F

Electrical characteristics

Figure 8. Collector current vs. switching

frequency

Figure 9. Forward bias safe operating area for

TO-247

Figure 10. Normalized VGE(th) vs. junction

temperature

Figure 11. Normalized BVCES vs. junction

temperature

AM17145v1

100

110

Ic [A]

f [kHz]

rectangular current shape,

(duty cycle=0.5, V

CC = 400V, RG=4.7Ω,

GE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

AM17146v1

0.01

0.1

100

110

100

IC (A)

VCE (V)

(single pulse T

C =25 °C,

J <=175 °C; VGE =15 V)

1 μs

100 μs

1 ms

VCE= VGE

IC= 1mA

AM17149v1

0.6

0.7

0.8

0.9

1.0

1.1

-50 -25

75 100 125 150 175

VGE(th)

norm

(V)

TJ(ºC)

AM17150v1

0.9

1.0

1.1

-50 -25

255075 100 125 150 175

BVces

norm

(V)

TJ(ºC)

IC= 2 mA

Figure 12. Capacitance variations

Figure 13. Gate charge vs. gate-emitter voltage

AM17151v1

100

1000

10000

0.1

C (pF)

VCE (V)

C res

C oes

C ies

f= 1MHz, V

GE =0

AM17152v1

0100

200

300

VGE (V)

Qg (nC)

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