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STGW80H65DFB Scheda tecnica(PDF) 9 Page - STMicroelectronics |
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STGW80H65DFB Scheda tecnica(HTML) 9 Page - STMicroelectronics |
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9 / 18 page ![]() STGW80H65DFB, STGWT80H65DFB Electrical characteristics DocID024366 Rev 8 9/18 Figure 20: Reverse recovery current vs. diode current slope Figure 21: Reverse recovery time vs. diode current slope Figure 22: Reverse recovery charge vs. diode current slope Figure 23: Reverse recovery energy vs. diode current slope Figure 24: Capacitance variations Figure 25: Collector current vs. switching frequency = 80 A r 40 60 80 100 120 1 10 Ic [A] f [kHz] G Ω rectangular current shape, (duty cycle=0.5, V CC = 400V, R =10 , V GE = 0/15 V, TJ =175°C) Tc=80°C Tc=100 °C 140 160 GIPD260520141426FSR |
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