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STPS2H100RL Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STPS2H100RL
Spiegazioni elettronici  HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PDF  4 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS2H100RL Scheda tecnica(HTML) 2 Page - STMicroelectronics

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STPS2H100
2/4
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient
Lead length = 10 mm
100
°C/W
Rth(j-l)
Junction to lead
Lead lenght = 10 mm
35
THERMAL RESISTANCES
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25°C
VR =VRRM
1µA
Tj = 125°C
0.2
0.5
mA
VF **
Forward voltage drop
Tj =25
°CIF = 2 A
0.86
V
Tj = 125
°CIF = 2 A
0.65
0.70
Tj = 25°C
IF = 4 A
0.92
Tj = 125
°CIF = 4 A
0.72
0.78
Pulse test :
* tp=5ms,
δ <2%
** tp = 380 µs,
δ <2%
To evaluate the maximum conduction losses use the following equation :
P=0.62xIF(AV) +0.04xIF
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
P
(W)
F(AV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
I
(A)
F(AV)
T
δ=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
Fig. 1: Conduction losses versus average current.
I
(A)
F(AV)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
25
50
75
100
125
150
175
T
(°C)
amb
R=R
th(j-a)
th(j-I)
R
=100°C/W
th(j-a)
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ=0.5).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (µs)
p
P(t )
P
(1µs)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.



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