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STL8P4LLF6 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STL8P4LLF6 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STL8P4LLF6 Electrical ratings DocID025617 Rev 2 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at Tpcb = 25 °C 8 A ID (1) Drain current (continuous) at Tpcb = 100 °C 5 A IDM (1)(2) Drain current (pulsed) 32 A PTOT Total dissipation at Tpcb = 25 °C 2.9 W Tstg Storage temperature -55 to 150 °C Tj Maximum junction temperature 150 °C Notes: (1) this value is related to Rthj-pcb (2) Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.50 °C/W Rthj-pcb (1) Thermal resistance junction-pcb max. 42.8 °C/W Notes: (1) When mounted on FR-4 board of 1 inch², 2oz Cu, t ≤ 10 s For the P-channel Power MOSFET, current polarity of voltages and current have to be reversed. |
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