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STTH30W03C Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STTH30W03C Scheda tecnica(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Characteristics STTH30W03C 4/8 Doc ID 023116 Rev 1 Figure 5. Reverse recovery time versus dIF/dt (typical values, per diode) Figure 6. Reverse recovery charges versus dIF/dt (typical values, per diode) trr(ns) 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=200 V Tj=125 °C dIF/dt(A/µs) QRR(nC) 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=200 V Tj=125 °C dIF/dt(A/µs) Figure 7. Relative variations of dynamic parameters versus junction temperature Figure 8. Reverse recovery softness factor versus dIF/dt (typical values, per diode) Tj (°C) 0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 IF=IF(AV) VR=200 V Reference: Tj=125 °C IRM SFACTOR QRR S factor 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) VR=200 V Tj=125 °C dIF/dt(A/µs) |
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