TXN625RG datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

TN2540, TXN625, TYN625, TYN825, TYN1225

4/11

DocID7478 Rev 9

Figure 5. Relative variation of thermal

impedance versus pulse duration (TO-220AB

ins)

Figure 6. Relative variation of gate trigger,

holding, and latching currents versus junction

temperature

K=[Z /R

th]

1,0E-02

1,0E-01

1,0E+00

1,0E-03

1,0E-02

1,0E-01

1,0E+00

1,0E+01

1,0E+02

1,0E+03

t (s)

Zth(j-c)

Zth(j-a)

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GTHL

,I ,I [T =25°C]

GTHL

IGT

IH & IL

Figure 7. Surge peak on-state current versus

number of cycles

Figure 8. Non-repetitive surge peak on-state

current, and corresponding values of I2t

I(A)

TSM

100

150

200

250

300

350

100

1000

Non repetitive

Tj initial=25 °C

Repetitive

TC=83°C

t =10ms

One cycle

Number of cycles

0.01

0.10

1.00

10.00

100

1000

2000

(A), I t (A s)

TSM

Sinusoidal pulse width t (ms)

I t

ITSM

T initial = 25°C

dI/dt limitation

Figure 9. On-state characteristics (maximum

values)

Figure 10. Thermal resistance junction to

ambient versus copper surface under tab

(D2PAK)

(A)

100

1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Tj max :

Vto = 0.77V

Rd = 14m˜

(V)

1620242832

3640

S(cm²)

(°C/W)

th(j-a)

Epoxy printed circuit board FR4,

copper thickness = 35 µm

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