VIPER53DIP datasheet(4/24 Pages) STMICROELECTRONICS

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VIPer53DIP / VIPer53SP

4/24

ELECTRICAL CHARACTERISTICS (Tj=25°C, VDD=13V, unless otherwise specified)

POWER SECTION

Note 4. On clamped inductive load

5. This parameter can be used to compute the energy dissipated at turn on Eton according to the initial drain to source voltage VDSon

and the following formula:

OSCILLATOR SECTION

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Voltage

ID=1mA; VCOMP=0V

620

IDSS

Off State Drain Current

VDS=500V; VCOMP=0V; Tj=125°C

150

µA

RDS(on)

Static Drain-Source

On State Resistance

ID=1A; VCOMP=4.5V; VTOVL=0V

Tj=25°C

Tj=100°C

0.9

1.7

Ω

tfv

Fall Time

ID=0.2A; VIN=300V

(See figure 1 and note 4)

100

trv

Rise Time

ID=1A; VIN=300V

(See figure 1 and note 4)

Coss

Drain Capacitance

VDS=25V

170

CEon

Effective Output

Capacitance

200V < VDSon < 400V

(See note 5)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

FOSC1

Oscillator Frequency

Initial Accuracy

RT=8kΩ; CT=2.2nF

(See figure 9)

100

105

kHz

FOSC2

Oscillator Frequency

Total Variation

RT=8kΩ; CT=2.2nF

(See figure 12)

VDD=VDDon ... VDDovp; Tj=0 ... 100°C

100

107

kHz

VOSChi

Oscillator Peak Voltage

VOSClo

Oscillator Valley Voltage

ton

--- C

Eon

300

DSon

300

----------------





1.5

⋅⋅

⋅

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