STM32F100VD datasheet(54/106 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F100xC, STM32F100xD, STM32F100xE

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DocID15081 Rev 10

Figure 14. Typical application with a 32.768 kHz crystal

5.3.7

Internal clock source characteristics

The parameters given in Table 24 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 9.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Table 24. HSI oscillator characteristics(1)

1. VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI Accuracy of HSI oscillator

TA = –40 to 105 °C(2)

2. Based on characterization, not tested in production.

-2.4

2.5

TA = –10 to 85 °C(2)

-2.2

1.3

TA = 0 to 70 °C(2)

-1.9

1.3

TA = 25 °C

-1

tsu(HSI)(3)

3. Guaranteed by design. Not tested in production

HSI oscillator startup time

µs

IDD(HSI)(3) HSI oscillator power consumption

100

µA

Table 25. LSI oscillator characteristics (1)

1. VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

Frequency

kHz

tsu(LSI)(2)

2. Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)(2) LSI oscillator power consumption

0.65

1.2

µA

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