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F2255 Scheda tecnica(PDF) 2 Page - Integrated Device Technology

Il numero della parte F2255
Spiegazioni elettronici  Voltage Variable RF Attenuator
PDF  24 Pages
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Produttore elettronici  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
Logo IDT - Integrated Device Technology

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Voltage Variable RF Attenuator
50MHz to 6000MHz
Voltage Variable RF Attenuator
2
REV 4, January 2017
F2250NLGK
Datasheet
ABSOLUTE MAXIMUM RATINGS
Parameter / Condition
Symbol
Min
Max
Units
VDD to GND
VDD
-0.3
5.5
V
VMODE to GND
VMODE
-0.3
Minimum ( VDD, 3.9 )
V
VCTRL to GND
VDD = 0V to 5.25V
VCTRL
-0.3
Minimum ( VDD, 4.0 )
V
RF1, RF2 to GND
VRF
-0.3
0.3
V
RF1 or RF2 Input Power applied for 24 hours maximum
(VDD applied @ 2GHz and +85
°C)
PMAX24
30
dBm
RF1 or RF2 Continuous Operating Power
PMAX_OP
See Figure 1
dBm
Maximum Junction Temperature
TJMAX
+150
°C
Storage Temperature Range
TST
-65
+150
°C
Lead Temperature (soldering, 10s)
TLEAD
+260
°C
ESD Voltage– HBM (Per ESD STM5.1-2007)
VESDHBM
Class 1C
ESD Voltage – CDM (Per ESD STM5.3.1-2009)
VESDCDM
Class C3
FIGURE 1: MAXIMUM RF INPUT POWER VS. RF FREQUENCY
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
ΘJA (Junction – Ambient)
80.6°C/W
ΘJC (Junction – Case) The Case is defined as the exposed paddle
5.1°C/W
Moisture Sensitivity Rating (Per J-STD-020)
MSL 1



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