12

ATF-331M4 Minipak Model

NFET=yes

PFET=no

Vto=0.95

Beta=0.48

Lambda=0.09

Alpha=4

B=0.8

Tnom=27

Idstc=

Vbi=0.7

Tau=

Betatce=

Delta1=0.2

Delta2=

Gscap=3

Cgs=1.764 pF

Gdcap=3

Cgd=0.338 pF

Rgd=

Tqm=

Vmax=

Fc=

Rd=0.125

Rg=1

Rs=0.0625

Ld=0.0034 nH

Lg=0.0039 nH

Ls=0.0012 nH

Cds=0.0776 pF

Crf=0.1

Rc=62.5

Gsfwd=1

Gsrev=0

Gdfwd=1

Gdrev=0

Vjr=1

Is=1 nA

Ir=1 nA

Imax=0.1

Xti=

N=

Eg=

Vbr=

Vtotc=

Rin=

Taumdl=no

Fnc=1 E6

R=0.17

C=0.2

P=0.65

wVgfwd=

wBvgs=

wBvgd=

wBvds=

wldsmax=

wPmax=

AllParams=

Advanced_Curtice2_Model

MESFETM1

GATE

SOURCE

INSIDE Package

Port

G

Num=1

C

C1

C=0.28 pF

Port

S1

Num=2

SOURCE

DRAIN

Port

S2

Num=4

Port

D

Num=3

L

L6

L=0.147 nH

R=0.001

C

C2

C=0.046 pF

L

L7

L=0.234 nH

R=0.001

MSub

TLINP

TL3

Z=Z2 Ohm

L=23.6 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL9

Z=Z2 Ohm

L=11 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

VAR

VAR1

K=5

Z2=85

Z1=30

Var

Egn

TLINP

TL1

Z=Z2/2 Ohm

L=22 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL2

Z=Z2/2 Ohm

L=20 0 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL7

Z=Z2/2 Ohm

L=5.2 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

TLINP

TL5

Z=Z2 Ohm

L=27.5 mil

K=K

A=0.000

F=1 GHz

TanD=0.001

L

L1

L=0.234 nH

R=0.001

L

L4

L=0.281 nH

R=0.001

GaAsFET

FET1

Mode1=MESFETM1

Mode=Nonlinear

MSUB

MSub2

H=25.0 mil

Er=9.6

Mur=1

Cond=1.0E+50

Hu=3.9e+034 mil

T=0.15 mil

TanD=0

Rough=0 mil

ATF-331M4 Die Model

This model can be used as a design tool. It has been tested on ADS for various specifications. However, for more precise

and accurate design, please refer to the measured data in this data sheet. For future improvements, Broadcom reserves

the right to change these models without prior notice.