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AS4C8M16SA Scheda tecnica(PDF) 4 Page - Alliance Semiconductor Corporation

Il numero della parte AS4C8M16SA
Spiegazioni elettronici  Fully synchronous operation
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Produttore elettronici  ALSC [Alliance Semiconductor Corporation]
Homepage  https://www.alliancememory.com
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AS4C8M16SA Scheda tecnica(HTML) 4 Page - Alliance Semiconductor Corporation

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AS4C8M16SA
Confidential
4
Rev. 2.2
Mar /2014
Pin Descriptions
Table 3. Pin Details
Symbol
Type
Description
CLK
Input
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on
the positive edge of CLK. CLK also increments the internal burst counter and
controls the output registers.
CKE
Input
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. If
CKE goes low synchronously with clock (set-up and hold time same as other
inputs), the internal clock is suspended from the next clock cycle and the state of
output and burst address is frozen as long as the CKE remains low. When all
banks are in the idle state, deactivating the clock controls the entry to the Power
Down and Self Refresh modes. CKE is synchronous except after the device enters
Power Down and Self Refresh modes, where CKE becomes asynchronous until
exiting the same mode. The input buffers, including CLK, are disabled during
Power Down and Self Refresh modes, providing low standby power.
BA0,BA1
Input
Bank Activate: BA0, BA1 input select the bank for operation.
BA1
BA0
Select Bank
0
0
BANK #A
0
1
BANK #B
1
0
BANK #C
1
1
BANK #D
A0-A11
Input
Address Inputs: A0-A11 are sampled during the BankActivate command (row
address A0-A11) and Read/Write command (column address A0-A8 with A10
defining Auto Precharge) to select one location out of the 2M available in the
respective bank. During a Precharge command, A10 is sampled to determine if all
banks are to be precharged (A10 = HIGH). The address inputs also provide the op-
code during a Mode Register Set command.
CS#
Input
Chip Select: CS# enables (sampled LOW) and disables (sampled HIGH) the
command decoder. All commands are masked when CS# is sampled HIGH. CS#
provides for external bank selection on systems with multiple banks. It is
considered part of the command code.
RAS#
Input
Row Address Strobe: The RAS# signal defines the operation commands in
conjunction with the CAS# and WE# signals and is latched at the positive edges of
CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted "HIGH,"
either the BankActivate command or the Precharge command is selected by the
WE# signal. When the WE# is asserted "HIGH," the BankActivate command is
selected and the bank designated by BA is turned on to the active state. When the
WE# is asserted "LOW," the Precharge command is selected and the bank
designated by BA is switched to the idle state after the precharge operation.
CAS#
Input
Column Address Strobe: The CAS# signal defines the operation commands in
conjunction with the RAS# and WE# signals and is latched at the positive edges of
CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column access
is started by asserting CAS# "LOW." Then, the Read or Write command is
selected by asserting WE# "LOW" or "HIGH."



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