IXTH16P20 datasheet(1/2 Pages) IXYS

Il numero della parte	IXTH16P20

Spiegazioni elettronici	Standard Power MOSFET

PDF	2 Pages

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Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

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1 / 2 page

TO-247 AD

G = Gate,

D = Drain,

S = Source,

TAB = Drain

D (TAB)

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

-200

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

-200

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

-16

A

I

DM

T

C

= 25

°C, pulse width limited by T

J

-64

A

I

AR

T

C

= 25

°C

-16

A

E

AR

T

C

= 25

°C30

mJ

P

D

T

C

= 25

°C

180

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque

1.13/10 Nm/lb.in.

Weight

6g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = -250 µA

-200

V

GS(th)

V

DS = VGS, ID = -250 µA

-3.0

-5.0

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = 0.8

V

DSS

T

J =

25

°C

-25

µA

V

GS = 0 V

T

J = 125 ° C-1

mA

R

DS(on)

V

GS = -10 V, ID =

0.5 I

D25

0.22

Ω

Features

• Internationalstandardpackage

JEDEC TO-247 AD

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance (<5 nH)

- easy to drive and to protect

Applications

• High side switching

• Push-pull amplifiers

• DC choppers

• Automatic test equipment

Advantages

• Easy to mount with 1 screw

(isolated mounting screw hole)

• Space savings

• High power density

98906 (2/02)

P-Channel Enhancement Mode

Avalanche Rated

Standard Power MOSFET

IXTH 16P20

Advance Technical Information

V

DSS

= -200 V

I

D25

= -16 A

R

DS(on)

= 0.22

Ω

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