MDS3753E datasheet(1/6 Pages) MGCHIP

Il numero della parte	MDS3753E

Spiegazioni elettronici	P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm)

PDF	6 Pages

Scroll/Zoom	100%

Produttore elettronici	MGCHIP [MagnaChip Semiconductor.]

Homepage	http://www.magnachip.co.kr

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1 / 6 page

Nov 2011 Version 1.1

MagnaChip Semiconductor Ltd.

1

D

G

S

G

S

Absolute Maximum Ratings (TA =25

oC unless otherwise noted)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

-40

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(Note 1)

ID

-7.1

A

Pulsed Drain Current

IDM

-50

A

Power Dissipation

PD

2.5

W

Single Pulse Avalanche Energy

(Note 2)

EAS

98

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(Note 1)

RθJA

50

oC/W

Thermal Resistance, Junction-to-Case

RθJC

25

MDS3753E

P-Channel Trench MOSFET, -40V, -7.1A, 30m

Ω

General Description

The MDS3753E uses advanced MagnaC

hip’s MOSFET

Technology

to

provide

low

on-state

resistance,

high

switching performance and excellent reliability

Low RDS(ON) and low gate charge operation offer superior

benefit in the application.

1(S)

2(S)

3(S)

4(G)

8(D)

7(D)

6(D)

5(D)

Features



VDS = -40V



ID = -7.1A @ VGS = 10V



RDS(ON)

<30m

 @ V

GS = -10V

<37m

 @ V

GS = -4.5V

Applications



Inverters



General purpose applications

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