P30NS15LFP datasheet(1/9 Pages) STMICROELECTRONICS

Il numero della parte	P30NS15LFP

Spiegazioni elettronici	N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY??POWER MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

Homepage	http://www.st.com

Logo

1 / 9 page

1/9

July 2003

.

STP30NS15LFP

N-CHANNEL 150V - 0.085

Ω - 10A TO-220FP

MESH OVERLAY™ POWER MOSFET

s

TYPICAL RDS(on) = 0.085Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an advanced

family

of

power

MOSFETs

with

outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprietary edge termination

structure,

gives

the

lowest

RDS(on)

per

area,

exceptional

avalanche

and

dv/dt

capabilities

and

unrivalled gate charge and switching characteristics.

APPLICATIONS

s

SWITCHING “S” CAPACITOR

TYPE

VDSS

RDS(on)

ID

STP30NS15LFP

150 V

<0.1

Ω

10 A

1

2

3

TO-220FP

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) Starting Tj = 25 oC, ID = 15A, VDD= 75V

(2) ISD ≤35A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

150

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

150

V

VGS

Gate- source Voltage

± 15

V

ID

Drain Current (continuous) at TC = 25°C

10

A

ID

Drain Current (continuous) at TC = 100°C

7A

IDM(•)

Drain Current (pulsed)

40

A

Ptot

Total Dissipation at TC = 25°C

30

W

Derating Factor

0.2

W/°C

EAS(1)

Single Pulse Avalanche Energy

300

mJ

dv/dt (2)

Peak Diode Recovery voltage slope

2.4

V/ns

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Codice articolo simile - P30NS15LFP

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
VBsemi Electronics Co.,...	P30N06LE	1Mb / 9P	N-Channel 60 V (D-S) MOSFET
VBsemi Electronics Co.,...	P30N06TA	1Mb / 9P	N-Channel 60 V (D-S) MOSFET
STMicroelectronics	P30N10	1Mb / 13P	N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package 01-Feb-2016
STMicroelectronics	P30NF10	510Kb / 16P	N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET 26-Jun-2006

More results

Descrizione simile - P30NS15LFP

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
STMicroelectronics	IRF634	333Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Jul-2001
	IRF640	107Kb / 9P	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET Oct-1999
	STB40NS15	289Kb / 7P	N-CHANNEL 150V - 0.042Ω - 40A D2PAK MESH OVERLAY™ MOSFET Dec-2001
	STP16NS25	330Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET May-2002
	STP40NS15	114Kb / 6P	N-CHANNEL 150V - 0.042ohm - 40A TO-220 MESH OVERLAY™ MOSFET Oct-2000
	STP8NS25	329Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY™ MOSFET Apr-2001
	STW40NS15	116Kb / 6P	N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY™ MOSFET Oct-2000
	IRF630M	343Kb / 9P	N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET Oct-2001
	IRF630M	326Kb / 14P	N-channel 200V - 0.35Ω - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET 28-Jun-2006
	IRF-634	326Kb / 14P	N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET 28-Jun-2006

More results

P30NS15LFP Scheda tecnica(PDF) 1 Page - STMicroelectronics

P30NS15LFP Scheda tecnica(HTML) 1 Page - STMicroelectronics

Codice articolo simile - P30NS15LFP

Descrizione simile - P30NS15LFP

Html Pages

1 2 3 4 5 6 7 8 9

Scheda tecnica Scarica

Link URL