AM29SL800D datasheet(40/46 Pages) AMD

40 / 46 page

ADV ANCE

I N FO RMAT I O N

March 17, 2003

Am29SL800D

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 2.0 V V

CC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 5 for further information on command definitions.

6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Includes all pins except VCC. Test conditions: VCC = 1.8 V, one pin at a time.

TSOP PIN CAPACITANCE

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.7

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

Byte Programming Time

150

µs

Excludes system level

overhead (Note 5)

Word Programming Time

210

µs

Chip Programming Time

(Note 3)

Byte Mode

5.3

Word Mode

3.7

Description

Min

Max

Input voltage with respect to VSS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

11.0 V

Input voltage with respect to VSS on all I/O pins

–0.5 V

VCC + 0.5 V

VCC Current

–100 mA

+100 mA

Parameter

Symbol

Parameter Description

Test Setup

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

7.5

COUT

Output Capacitance

VOUT = 0

8.5

CIN2

Control Pin Capacitance

VIN = 0

7.5

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years

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