ESD8024 datasheet(2/6 Pages) ONSEMI

2 / 6 page

ESD8024

http://onsemi.com

See Application Note AND8308/D for further description of survivability specs.

Pin 1

Pin 2

Pin 3

Pin 22 Pin 23 Pin 24

Center Pad

Figure 1. Pin Schematic

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

VRWM

Working Peak Voltage

Maximum Reverse Leakage Current @ VRWM

VBR

Breakdown Voltage @ IT

Test Current

VHOLD

Holding Reverse Voltage

IHOLD

Holding Reverse Current

RDYN

Dynamic Resistance

IPP

Maximum Peak Pulse Current

Clamping Voltage @ IPP

VC = VHOLD + (IPP * RDYN)

VCVRWMVHOLD

VBR

RDYN

IHOLD

−IPP

RDYN

IPP

VC = VHOLD + (IPP * RDYN)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

All Pins (1−24) to GND (Note 1)

2.5

Forward Voltage

IF = 10 mA, GND to All Pins (1−24)

0.5

0.85

1.1

Breakdown Voltage

VBR

IT = 1 mA, All Pins (1−24) to GND

5.5

7.0

9.0

Reverse Leakage Current

VRWM = 2.5 V, All Pins (1−24) to GND

0.5

Holding Reverse Voltage

VHOLD

I/O Pin to GND

1.5

Holding Reverse Current

IHOLD

I/O Pin to GND

Clamping Voltage

IPP = 1 A, All Pins (1−24) to GND (8/20 ms pulse)

4.0

Clamping Voltage

IPP = 10 A, All Pins (1−24) to GND (8/20 ms pulse)

7.0

Clamping Voltage

IPP = 15 A, All Pins (1−24) to GND (8/20 ms pulse)

8.0

Clamping Voltage

IEC61000−4−2, ±8 kV Contact

See Figures 2 and 3

Junction Capacitance

VR = 0 V, f = 1 MHz between I/O Pins

2.0

Junction Capacitance

VR = 0 V, f = 1 MHz between I/O Pins and GND

4.0

1. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC

or continuous peak operating voltage level.

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