MP6759 datasheet(1/6 Pages) TOSHIBA

Il numero della parte	MP6759

Spiegazioni elettronici	TOSHIBA GTR Module Silicon N Channel IGBT

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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MP6759

2002-11-20

1

TOSHIBA GTR Module Silicon N Channel IGBT

MP6759

Motor Control Applications

High Power Switching Applications

· The electrodes are isolated from case.

· 6 IGBTs are built into 1 package.

· Enhancement-mode

· Low saturation voltage

: VCE (sat) = 2.7 V (max) (IC = 10 A)

· High speed: tf = 0.35 µs (max) (IC = 10 A)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

VCES

600

V

Gate-emitter voltage

VGES

±20

V

DC

IC

10

Collector current

1 ms

ICP

20

A

DC

IF

10

Forward current

1 ms

IFM

20

A

Collector power dissipation

(Tc = 25°C)

PC

40

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−40 to 125

°C

Isolation voltage

VIsol

2500

(AC 1 minute)

V

Screw torque

―

1.5

N·m

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-78A1A

Weight: 44 g (typ.)

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