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SW030R04VT Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

Il numero della parte SW030R04VT
Spiegazioni elettronici  N-channel Enhanced mode TO-220 MOSFET
PDF  6 Pages
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Produttore elettronici  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Homepage  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW030R04VT Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0
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SW030R04VT
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
DSS
Drain to source voltage
40
V
I
D
Continuous drain current (@T
C=25
oC)
130*
A
Continuous drain current (@T
C=100
oC)
82*
A
I
DM
Drain current pulsed
(note 1)
520
A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy
(note 2)
826
mJ
E
AR
Repetitive avalanche energy
(note 1)
49
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
P
D
Total power dissipation (@T
C=25
oC)
121
W
Derating factor above 25oC
0.98
W/oC
T
STG, TJ
Operating junction temperature & storage temperature
-55 ~ + 150
oC
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
oC
Thermal characteristics
Symbol
Parameter
Value
Unit
R
thjc
Thermal resistance, Junction to case
1.03
oC/W
R
thja
Thermal resistance, Junction to ambient
52
oC/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW P 030R04VT
SW030R04VT
TO-220
TUBE
N-channel Enhanced mode TO-220 MOSFET
Features
 High ruggedness
 Low R
DS(ON) (Typ 2.8mΩ)@VGS=10V
(Typ 3.7m
Ω)@V
GS=4.5V
 Low Gate Charge (Typ 120nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:Power Supply,LED Boost
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS : 40V
I
D
: 130A
R
DS(ON) : 2.8mΩ@VGS=10V
3.7m
Ω@V
GS=4.5V
1
2
3
TO-220
1
2
3


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