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SW4N40DC Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

Il numero della parte SW4N40DC
Spiegazioni elettronici  N-channel Enhanced mode TO-251S/TO-252 MOSFET
PDF  6 Pages
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Produttore elettronici  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Homepage  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4N40DC Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW4N40DC
Nov. 2015. Rev. 2.0
1/6
N-channel Enhanced mode TO-251S/TO-252 MOSFET
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-251S
TO-252
V
DSS
Drain to source voltage
400
V
I
D
Continuous drain current (@T
C=25
oC)
4*
A
Continuous drain current (@T
C=100
oC)
2.5*
A
I
DM
Drain current pulsed
(note 1)
16
A
V
GS
Gate to source voltage
±30
V
E
AS
Single pulsed avalanche energy
(note 2)
142
mJ
E
AR
Repetitive avalanche energy
(note 1)
20
mJ
dv/dt
Peak diode recovery dv/dt
(note 3)
5
V/ns
P
D
Total power dissipation (@T
C=25
oC)
104
83.3
W
Derating factor above 25oC
0.8
0.7
W/oC
T
STG, TJ
Operating junction temperature & storage temperature
-55 ~ + 150
oC
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
oC
Thermal characteristics
Symbol
Parameter
Value
Unit
TO-251S
TO-252
R
thjc
Thermal resistance, Junction to case
1.2
1.5
oC/W
R
thja
Thermal resistance, Junction to ambient
92
85
oC/W
*. Drain current is limited by junction temperature.
BV
DSS : 400V
I
D
: 4A
R
DS(ON) : 1.4Ω
1. Gate 2. Drain 3. Source
TO-251S
1
2
3
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SWSI 4N40DC
SW4N40DC
TO-251S
TUBE
2
SWD 4N40DC
SW4N40DC
TO-252
REEL
1
2
3
Features
 High ruggedness
 Low R
DS(ON) (Typ 1.4Ω)@VGS=10V
 Low Gate Charge (Typ 11.7nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:LED, DC-DC
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-252
1
2
3


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