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SW4N40DC Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW4N40DC Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. SW4N40DC Nov. 2015. Rev. 2.0 1/6 N-channel Enhanced mode TO-251S/TO-252 MOSFET Absolute maximum ratings Symbol Parameter Value Unit TO-251S TO-252 V DSS Drain to source voltage 400 V I D Continuous drain current (@T C=25 oC) 4* A Continuous drain current (@T C=100 oC) 2.5* A I DM Drain current pulsed (note 1) 16 A V GS Gate to source voltage ±30 V E AS Single pulsed avalanche energy (note 2) 142 mJ E AR Repetitive avalanche energy (note 1) 20 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 104 83.3 W Derating factor above 25oC 0.8 0.7 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit TO-251S TO-252 R thjc Thermal resistance, Junction to case 1.2 1.5 oC/W R thja Thermal resistance, Junction to ambient 92 85 oC/W *. Drain current is limited by junction temperature. BV DSS : 400V I D : 4A R DS(ON) : 1.4Ω 1. Gate 2. Drain 3. Source TO-251S 1 2 3 Order Codes Item Sales Type Marking Package Packaging 1 SWSI 4N40DC SW4N40DC TO-251S TUBE 2 SWD 4N40DC SW4N40DC TO-252 REEL 1 2 3 Features High ruggedness Low R DS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 11.7nC) Improved dv/dt Capability 100% Avalanche Tested Application:LED, DC-DC General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. TO-252 1 2 3 |
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