Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

SW4N60DC Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

Il numero della parte SW4N60DC
Spiegazioni elettronici  N-channel Enhancement mode TO-251/TO-252MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Homepage  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW4N60DC Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW4N60DC Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW4N60DC Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW4N60DC Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW4N60DC Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW4N60DC Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW4N60DC Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
1/6
Absolute maximum ratings
Thermal characteristics
Symbol
Parameter
Value
Unit
TO-251
TO-252
Rthjc
Thermal resistance, Junction to case
0.85
0.85
oC/W
Rthcs
Thermal resistance, Case to Sink
oC/W
Rthja
Thermal resistance, Junction to ambient
87
oC/W
1. Gate 2. Drain 3. Source
SW4N60DC
Item
Sales Type
Marking
Package
Packaging
1
SW I 4N60DC
SW4N60DC
TO251
TUBE
2
SW D 4N60DC
SW4N60DC
TO252
TUBE
Order Codes
Symbol
Parameter
Value
Unit
TO-251
TO-252
VDSS
Drain to Source Voltage
600
V
ID
Continuous Drain Current (@TC=25oC)
4*
A
Continuous Drain Current (@TC=100oC)
2.5*
A
IDM
Drain current pulsed
(note 1)
16
A
VGS
Gate to Source Voltage
±30
V
EAS
Single pulsed Avalanche Energy
(note 2)
170
mJ
EAR
Repetitive Avalanche Energy
(note 1)
25
mJ
dv/dt
Peak diode Recovery dv/dt
(note 3)
5
V/ns
PD
Total power dissipation (@TC=25oC)
147
147
W
Derating Factor above 25oC
1.17
1.17
W/oC
TSTG, TJ
Operating Junction Temperature & Storage Temperature
-55 ~ + 150
oC
TL
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
oC
TO-251
1
2
3
*. Drain current is limited by junction temperature.
TO-252
1
2
3
N-channel Enhancement mode TO-251/TO-252 MOSFET
BV
DSS : 600V
I
D
: 4A
R
DS(ON) : 2.0Ω
1
2
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Features
 High ruggedness
 R
DS(ON) (Typ 2.0Ω)@VGS=10V
 Gate Charge (Typ 17nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application: LED,Charge


Codice articolo simile - SW4N60DC

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Xian Semipower Electron...
SW4N60D SEMIPOWER-SW4N60D Datasheet
682Kb / 6P
N-channel TO-220F/I-PAKN/D-PAK MOSFET
SW4N60DA SEMIPOWER-SW4N60DA Datasheet
877Kb / 7P
N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET
More results

Descrizione simile - SW4N60DC

Produttore elettroniciIl numero della parteScheda tecnicaSpiegazioni elettronici
logo
Xian Semipower Electron...
SW051R08ES-1 SEMIPOWER-SW051R08ES-1 Datasheet
654Kb / 6P
N-channel Enhanced mode TO-251/TO-252 MOSFET
SW070R08VT SEMIPOWER-SW070R08VT Datasheet
646Kb / 6P
N-channel Enhanced mode TO-251 MOSFET
SW1N90U SEMIPOWER-SW1N90U Datasheet
689Kb / 6P
N-channel Enhancement mode TO-251 MOSFET
SW2N60DC SEMIPOWER-SW2N60DC Datasheet
598Kb / 6P
N-channel Enhanced mode TO-252/TO-251 MOSFET
SW4N65DB SEMIPOWER-SW4N65DB Datasheet
768Kb / 6P
N-channel Enhanced mode TO-251 MOSFET
SW4N70K SEMIPOWER-SW4N70K Datasheet
744Kb / 6P
N-channel Enhancement mode TO-220F/TO-251/TO-252 MOSFET
SW30N06U SEMIPOWER-SW30N06U Datasheet
719Kb / 6P
N-channel Enhancement mode TO-251/TO-252MOSFET
SW60N06V2 SEMIPOWER-SW60N06V2 Datasheet
847Kb / 6P
N-channel Enhanced mode TO-251 MOSFET
SW70N08V SEMIPOWER-SW70N08V Datasheet
636Kb / 6P
N-channel Enhanced mode TO-251 MOSFET
SW80N08V SEMIPOWER-SW80N08V Datasheet
727Kb / 6P
N-channel Enhanced mode TO-251 MOSFET
More results


Html Pages

1 2 3 4 5 6


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com