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SW38N65K Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW38N65K Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. SW38N65K Jun. 2016. Rev. 3.0 1/6 Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage 650 V I D Continuous drain current (@T C=25 oC) 38* A Continuous drain current (@T C=100 oC) 24* A I DM Drain current pulsed (note 1) 152 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 800 mJ E AR Repetitive avalanche energy (note 1) 120 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 357.2 W Derating factor above 25oC 2.9 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC T L Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 0.35 oC/W R thja Thermal resistance, Junction to ambient 34.6 oC/W *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source TO-247 Order Codes Item Sales Type Marking Package Packaging 1 SW T 38N65K SW38N65K TO-247 TUBE 1 2 3 N-channel Enhanced mode TO-247 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.09Ω)@VGS=10V Low Gate Charge (Typ 96nC) Improved dv/dt Capability 100% Avalanche Tested Application:Charge，LED，UPS，Servicer General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 650V I D : 38A R DS(ON) :0.09 Ω 1 2 3 |
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