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ACE6604B Scheda tecnica(PDF) 2 Page - ACE Technology Co., LTD.

Il numero della parte ACE6604B
Spiegazioni elettronici  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Produttore elettronici  ACE [ACE Technology Co., LTD.]
Homepage  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE6604B Scheda tecnica(HTML) 2 Page - ACE Technology Co., LTD.

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ACE6604B
N-Channel Enhancement Mode Power MOSFET
VER 1.1
2
Ordering information
ACE6604B XX + H
Electrical Characteristics TA=25℃, unless otherwise specified.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-source breakdown voltage
V(BR)DSS
VGS=0V, ID=250µA
60
V
Zero gate voltage drain current
IDSS
VDS=60V, VGS=0V
1
µA
Gate threshold voltage
VGS(th)
VGS=VDS, IDS=250µA
1.2
1.6
2.5
V
Gate leakage current
IGSS
VGS=±20V, VDS=0V
±100
µA
Drain-source on-state resistance
RDS(ON)
VGS=10V, ID=30A
4.6
5.6
mΩ
VGS=4.5V, ID=15A
5.3
7
Forward Trans conductance
gFS
VDS =10V, ID= 3A
15
S
Diode forward voltage
VSD
ISD=1A, VGS=0V
1.2
V
Maximum body-diode
continuous current
IS
85
A
Switching
Total Gate Charge
Qg
VGS=4.5V, VDS=30V,
ID=10A
33
nC
Gate-Source Charge
Qgs
11
Gate-Drain Charge
Qgd
12
Turn-on Delay Time
td (on )
VDD=15V, ID=1A,
VGS=10V,RG=3.3
Ω
21
ns
Turn-on Rise Time
tr
17
Turn-off Delay Time
td(off)
72
Turn-off Fall Time
tf
21
Dynamic
Input Capacitance
Ciss
VGS=0V, VDS=25V,
f=1.0MHz
4750
pF
Output Capacitance
Coss
330
Reverse Transfer Capacitance
Crss
161
PN: DFN5*6-EP
Pb - free
Halogen - free



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