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SW7N60K2F Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW7N60K2F Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 6 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2016. Rev. 2.0 1/6 SW7N60K2F Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to source voltage 600 V I D Continuous drain current (@T C=25 oC) 7* A Continuous drain current (@T C=100 oC) 4.4* A I DM Drain current pulsed (note 1) 28 A V GS Gate to source voltage ± 30 V E AS Single pulsed avalanche energy (note 2) 160 mJ E AR Repetitive avalanche energy (note 1) 16 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 89 W Derating factor above 25oC 0.7 W/oC T STG, TJ Operating junction temperature & storage temperature -55 ~ + 150 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 1.4 oC/W *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source Order Codes Item Sales Type Marking Package Packaging 1 SW D 7N60K2F SW7N60K2F TO-252 REEL N-channel Enhanced mode TO-252 MOSFET Features High ruggedness Low R DS(ON) (Typ 0.43Ω)@VGS=10V Low Gate Charge (Typ 13nC) Improved dv/dt Capability 100% Avalanche Tested Application: LED , Adaptor, Charge General Description This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BV DSS : 600V I D : 7A R DS(ON) : 0.43Ω 1 2 3 TO-252 1 2 3 |
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