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R5F564MLDDFC Scheda tecnica(PDF) 214 Page - Renesas Technology Corp

Il numero della parte R5F564MLDDFC
Spiegazioni elettronici  120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory
PDF  228 Pages
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

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R01DS0173EJ0110 Rev.1.10
Page 214 of 228
Oct 24, 2016
RX64M Group
5. Electrical Characteristics
Note 1. Definition of reprogram/erase cycle:
The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 100000),
erasing can be performed n times for each block. For instance, when 4-byte programming is performed 512 times for different
addresses in 2-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,
programming the same address for several times as one erasing is not enabled (overwriting is prohibited).
Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming (guaranteed range is from 1 to the
value of the minimum value).
Note 3. This shows the characteristics when reprogramming is performed within the specified range, including the minimum value.
Table 5.54
Data Flash Memory Characteristics
Conditions: VCC = AVCC0 = AVCC1 = VCC_USB = VBATT = 2.7 to 3.6 V, 2.7 ≤ VREFH0 ≤ AVCC0,
VCC_USBA = AVCC_USBA = 3.0 to 3.6 V
VSS = AVSS0 = AVSS1 = VREFL0 = VSS_USB = VSS1_USBA = VSS2_USBA = PVSS_USBA = AVSS_USBA = 0 V,
Temperature range for programming/erasure: Ta = Topr
Item
Symbol
FCLK = 4 MHz
20 MHz
≤ FCLK ≤ 60 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Programming time
4 bytes
tDP4
—
0.36
3.8
—
0.16
1.7
ms
Erasure time
64 bytes
tDE64
—3.1
18
—1.7
10
ms
Blank check time
4 bytes
tDBC4
——
84
——
30
μs
64 bytes
tDBC64
—
—
280
—
—
100
μs
2 Kbytes
tDBC2K
—
—
6169
—
—
2200
μs
Reprogramming/erasure cycle*1
NDPEC
100000
*2
—
—
100000
*2
——
—
Suspend delay time during programming
tDSPD
—
—
264
—
—
120
μs
First suspend delay time during erasure
(in suspend priority mode)
tDSESD1
—
—
216
—
—
120
μs
Second suspend delay time during
erasure
(in suspend priority mode)
tDSESD2
—
—
300
—
—
300
μs
Suspend delay time during erasing
(in erasure priority mode)
tDSEED
—
—
300
—
—
300
μs
Forced stop command
tFD
——
32
——
20
μs
Data hold time*3
tDDRP
10
—
—
10
—
—
—



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