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BD336 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD336 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BD336 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC=- 3A; IB= -12mA -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -3V -2.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 VCB= -100V; IE= 0,TC=150℃ -0.1 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE-1* DC Current Gain IC= -0.5A; VCE= -3V 2700 hFE-2* DC Current Gain IC= -3A; VCE=-3V 750 hFE-3* DC Current Gain IC= -6A; VCE= -3V 400 *:Measured under pulse conditions:tp<300us,σ<2% |
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