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L291 Scheda tecnica(PDF) 2 Page - IXYS Corporation |
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L291 Scheda tecnica(HTML) 2 Page - IXYS Corporation |
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2 / 2 page ![]() © 2004 IXYS All rights reserved 2 - 2 IXYS reserves the right to change limits, test conditions and dimensions. VBO 50 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode I FSM: Crest value. t: duration Fig.5 Maximum forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor Fig. 6 Transient thermal impedance per diode or thyristor, calculated 0.511.5 2 2.5 0 50 100 150 200 V [V] F I F [A] 1:T = 150° VJ C 2:T = 25°C VJ 1 2 0.4 0.6 0.8 1 1.2 1.4 1.6 10 0 10 1 10 2 10 3 t[ms] I (A) FSM TVJ=45°C TVJ=150°C 750 670 I ------ IFSM F(OV) 0 VRRM 1/2 VRRM 1 VRRM 2 4 6 10 TVJ=45°C TVJ=150°C t [ms] 1 10 10 10 2 3 4 As 2 50 100 150 200 0 10 30 50 70 DC sin.180° rec.120° c.60° re .30° T (°C) C IdAV [A] 0.01 0.1 1 10 1 2 3 4 K/W Zth t[s] Z thJK Z thJC 30 10 0 20 40 60 80 100 85 90 95 100 105 110 115 120 125 130 135 140 145 150 TC °C DC sin.180° rec.120° rec.60° rec.30° 5.35 2.35 1.35 0.85 0.6 0.35 = RTHCA [K/W] IFAVM [A] Tamb [K] 050 100 150 [W] PVTOT PSB 55 |
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