Motore di ricerca datesheet componenti elettronici
  Italian  ▼
ALLDATASHEETIT.COM

X  

LF353M Scheda tecnica(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Il numero della parte LF353M
Spiegazioni elettronici  Wide Bandwidth Dual JFET Input Operational Amplifier
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LF353M Scheda tecnica(HTML) 3 Page - National Semiconductor (TI)

  LF353M Datasheet HTML 1Page - National Semiconductor (TI) LF353M Datasheet HTML 2Page - National Semiconductor (TI) LF353M Datasheet HTML 3Page - National Semiconductor (TI) LF353M Datasheet HTML 4Page - National Semiconductor (TI) LF353M Datasheet HTML 5Page - National Semiconductor (TI) LF353M Datasheet HTML 6Page - National Semiconductor (TI) LF353M Datasheet HTML 7Page - National Semiconductor (TI) LF353M Datasheet HTML 8Page - National Semiconductor (TI) LF353M Datasheet HTML 9Page - National Semiconductor (TI) Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 14 page
background image
AC Electrical Characteristics (Continued)
(Note 5)
Symbol
Parameter
Conditions
LF353
Units
Min
Typ
Max
THD
Total Harmonic Distortion
A
V=+10, RL=10k,
V
O=20Vp−p,
BW=20 Hz-20 kHz
<0.02
%
Note 2: For operating at elevated temperatures, the device must be derated based on a thermal resistance of 115˚C/W typ junction to ambient for the N package,
and 158˚C/W typ junction to ambient for the H package.
Note 3: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4: The power dissipation limit, however, cannot be exceeded.
Note 5: These specifications apply for VS=±15V and 0˚C≤TA≤+70˚C. VOS,IBand IOS are measured at VCM=0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to the limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, PD.Tj=TA+θjA PD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice. VS
= ±6V to ±15V.
Note 8: Human body model, 1.5 k
Ω in series with 100 pF.
Typical Performance Characteristics
Input Bias Current
Input Bias Current
00564918
00564919
Supply Current
Positive Common-Mode Input Voltage Limit
00564920
00564921
www.national.com
3



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Scheda tecnica Scarica

Go To PDF Page


Link URL



Lei ha avuto il aiuto da alldatasheet?  [ DONATE ] 

Di alldatasheet   |   Richest di pubblicita   |   contatti   |   Privacy Policy   |   Collegamento alla scheda tecnica    |   scambio Link   |   Ricerca produttore
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com