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IRF730FP Scheda tecnica(PDF) 2 Page - First Components International

Il numero della parte IRF730FP
Spiegazioni elettronici  6.0A 400V N CHANNEL POWER MOSFET
PDF  3 Pages
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Produttore elettronici  FCI [First Components International]
Homepage  http://www.cotra.com.tw/
Logo FCI - First Components International

IRF730FP Scheda tecnica(HTML) 2 Page - First Components International

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ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25
.
CIRF730
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250
A)
V(BR)DSS
400
V
Drain-Source Leakage Current
(VDS = 400V, VGS = 0 V)
(VDS = 400V, VGS = 0 V, TJ = 125
)
IDSS
25
100
A
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
IGSSR
-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250
A)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3A) (Note 4)
RDS(on)
1.0
Forward Transconductance (VDS = 50V, ID = 3 A) (Note 4)
gFS
2.9
mhos
Input Capacitance
Ciss
515
720
pF
Output Capacitance
Coss
185
260
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
15
30
pF
Turn-On Delay Time
td(on)
7
10
ns
Rise Time
tr
11
20
ns
Turn-Off Delay Time
td(off)
19
40
ns
Fall Time
(VDD = 200 V, ID = 6 A,
RG = 9.1 , VGS = 10 V) (Note 4)
tf
10
20
ns
Total Gate Charge
Qg
9.5
nC
Gate-Source Charge
Qgs
2
nC
Gate-Drain Charge
(VDS = 320V, ID = 6A
VGS = 10 V) (Note 4)
Qgd
3
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Qrr
1.6
µC
Forward Turn-On Time
ton
**
Reverse Recovery Time
IF = 6A, di/dt = 100A/µs , TJ = 25
(Note 4)
trr
270
ns
Diode Forward Voltage
IS = 6A, VGS = 0 V, TJ = 25
(Note 4)
VSD
1.5
V
Note
(1)
Repetitive rating; pulse width limited by max. junction temperature
(2)
VDD = 50V, starting TJ = 25
, L=24mH, RG = 25 , IAS = 4.5A
(3)
ISD
4.5A, di/dt
75A/µs, VDD
V(BR)DSS, TJ
150
(4)
Pulse Test: Pulse Width
300µs, Duty Cycle
2%
** Negligible, Dominated by circuit inductance
IRF730FP
6.0A 400V N CHANNEL POWER MOSFET



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