IPS0551T datasheet(3/10 Pages) IRF

3 / 10 page

IPS0551T

www.irf.com

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Tsd

Over temperature threshold

—

165

—

See fig. 1

Isd

Over current threshold

120

See fig. 1

Vreset

IN protection reset threshold

1.5

1.9

2.8

Treset

Time to reset protection

µs

Vin = 0V, Tj = 25

EOI_OT

Short circuit energy (cf application note)

100

400

1200

µJ

Vcc = 14V

Protection Characteristics

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rds(on)

ON state resistance Tj = 25

—

4.5

5.2

@Tj=25

Rds(on)

ON state resistance Tj = 150

—

7.5

8.8

@Tj=150oC

Idss

Drain to source leakage current

0.01

µA

Vcc = 14V, Tj = 25oC

@Tj=25oC

V clamp 1 Drain to source clamp voltage 1

—

Id = 20mA (see Fig.3 & 4)

V clamp 2 Drain to source clamp voltage 2

—

Vsd

Body diode forward voltage

—

0.85

1Id = 35A, Vin = 0V

Vin clamp IN to source clamp voltage

8.0

9.5

Iin = 1 mA

Vth

IN threshold voltage

1.5

Id = 50mA, Vds = 14V

Iin, on

Input supply current (normal operation)

300

Vin = 5V

Iin, off

Input supply current (protection mode)

130

400

Vin = 5V

over-current triggered

Static Electrical Characteristics

(Tj = 25

oC unless otherwise specified. Standard footprint 70

µm of copper thickness)

Id=Ishutdown (see Fig.3 & 4)

µA

Switching Electrical Characteristics

Vcc = 14V, Resistive Load = 0.4Ω, Rinput = 50Ω, 100µs pulse, Tj = 25

oC, (unless otherwise specified).

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Ton

Turn-on delay time

0.25

Rise time

0.25

Trf

Time to 130% final Rds(on)

—15

—

Toff

Turn-off delay time

1.5

Fall time

0.5

Qin

Total gate charge

—

200

—

Vin = 5V

See figure 2

µs

Ω Vin = 5V, Ids = 10A

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