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LMV8172 Scheda tecnica(PDF) 4 Page - National Semiconductor (TI) |
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LMV8172 Scheda tecnica(HTML) 4 Page - National Semiconductor (TI) |
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4 / 6 page ![]() Test Circuits (Continued) Block Diagram Application Hints To get the best possible performance from the LMV8172T it is important to use a good PCB layout and the correct com- ponents. The 0.1 µF and 470 µF capacitors on the V CC1 and V EE lines should be as close as possible to their pins. The power traces should be wide and there should be no jumpers between the capacitors and the LMV8172T. The value of the electrolytic capacitors used on the V CC1 and V EE lines should be 470 µF or greater. The ground traces should also be as wide as possible. The diode and optional capacitor should be located close to the LMV8172T. The diode should be a fast-recovery type, the 1N4937 recommended has a t rr of 150 ns. The capacitor is optional, it may be needed in some PCB layouts. A suggested layout is shown in Figure 6. DS100010-4 FIGURE 4. DS100010-5 FIGURE 5. www.national.com 4 |
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