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TIP122L Scheda tecnica(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

Il numero della parte TIP122L
Spiegazioni elettronici  Silicon NPN transistor in a TO-126 Plastic Package.
PDF  6 Pages
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Produttore elettronici  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Homepage  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

TIP122L Scheda tecnica(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

  TIP122L Datasheet HTML 1Page - Foshan Blue Rocket Electronics Co.,Ltd. TIP122L Datasheet HTML 2Page - Foshan Blue Rocket Electronics Co.,Ltd. TIP122L Datasheet HTML 3Page - Foshan Blue Rocket Electronics Co.,Ltd. TIP122L Datasheet HTML 4Page - Foshan Blue Rocket Electronics Co.,Ltd. TIP122L Datasheet HTML 5Page - Foshan Blue Rocket Electronics Co.,Ltd. TIP122L Datasheet HTML 6Page - Foshan Blue Rocket Electronics Co.,Ltd.  
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TIP122L
Rev.F Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current - Continuous
IC
5.0
A
Collector Power Dissipation
PC(Tc=25 )
℃
40
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55～150
℃
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Emitter Breakdown
Voltage
VCEO
IC=100mA
IB=0
100
V
Collector Cut-Off Current
ICEO
VCE=50V
IB=0
0.5
mA
Collector Cut-Off Current
ICBO
VCB=100V
IE=0
0.2
mA
Emitter Cut-Off Current
IEBO
VEB=5.0V
IC=0
2.0
mA
DC Current Gain
hFE(1)
VCE=3.0V
IC=0.5A
1000
hFE(2)
VCE=3.0V
IC=3.0A
1000
Collector to Emitter Saturation
Voltage
VCE(sat)(1) IC=3.0A
IB=12mA
2.0
V
VCE(sat)(2) IC=5.0A
IB=20mA
4.0
V
Base to Emitter Voltage
VBE
IC=3.0A
VCE=3.0V
2.5
V
Collector Output Capacitance
Cob
VCB=10V
IE=0
f=0.1MHz
200
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)



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