SSG07N10J datasheet(1/3 Pages) SECOS

Il numero della parte	SSG07N10J

Spiegazioni elettronici	N-Ch Enhancement Mode Power MOSFET

PDF	3 Pages

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Produttore elettronici	SECOS [SeCoS Halbleitertechnologie GmbH]

Homepage	http://www.secosgmbh.com

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1 / 3 page

Elektronische Bauelemente

SSG07N10J

7A , 100V , RDS(ON) 28m

N-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Q07N10

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

SSG07N10J is the highest performance trench N-ch

MOSFETs with extreme high cell density, which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications. 100% EAS guaranteed with full

function reliability approved.

FEATURES

Advanced High Cell Density Trench Technology

Super Low Gate Charge

100% EAS Guaranteed

Green Device Available

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

4K

13 inch

ABSOLUTE MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

7

A

Pulsed Drain Current

IDM

28

A

Single Pulse Avalanche Energy

1

EAS

16

mJ

Total Power Dissipation

PD

1.4

W

Thermal Resistance from Junction to Ambient

RθJA

89

°C/ W

Lead Temperature for Soldering Purposes@1/8’’ form case for 10s

TL

260

°C

Junction and Storage Temperature Range

TJ, TSTG

150, -55~150

°C

Notes:

1.

EAS condition: VDD=25V,L=0.1mH,RG=25 ,Starting TJ=25°C.

Date Code

G

S

D

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.33

0.51

B

4.700

5.10

J

0.375 REF.

C

3.80

4.00

K

45°REF.

D

0°

8°

L

1.35

1.75

E

0.40

1.27

M

0.10

0.25

F

0.17

0.25

N

0.25 REF.

G

1.27 TYP.

SOP-8

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